ABSTRACT
Multiferroic materials are characterized by the coexistence of two or more properties of ferroelectricity, ferromagnetism, and ferroelasticity. The coexistence of at least two ferroic forms of ordering leads to additional interactions. A memory device with the best functionalities of ferroelectric memories (FeRAMs) and ferroelectric write and magnetic read operations (MRAMs) would effectively enhance the writing speed and reduce the specific energy consumption. A typical example is that of magnetoelectric multiferroic materials, in which an applied electric field can tune the ferromagnetic properties of the materials. Multiferroic and magnetoelectric materials present new possibilities towards enhancing data densities by many folds and thus pave the opportunity towards the fabrication of the “ultimate memory device” (Roy et al. 2012). Typical multiferroic materials belong to the group of the perovskite transition metal oxides,
only few efforts have been made to systematically investigate the conduction oxides thin films by a Spray Coating Method (SCM) (Wu et al. 2013, Wu et al. 2013). In this research, the m-SCM was used to develop Fe2O3 and Fe-doped ZnO thin films under different annealing temperatures. However, we found that the m-SPM would cause the Fe2O3 thin films forming the cracked-piece structure and Fe-doped ZnO forming a micron-flower structure. The effect of annealing temperature on the surface morphologies of Fe2O3 thin films and Fe-doped ZnO micron-flowers were investigated. The effect of annealing temperature on the resistivity (ρ), hall mobility (μ), and carrier concentration of Fe2O3 thin films were also investigated.
