ABSTRACT
Reliability simulation assessment of microelectronic device based on physic of failure (Pecht, M. A. et al. 2007) is dierent from traditional method of reliability analysis and assessment. Performance parameters such as material, structure, technology and stress are used to build the digital model of the product, and FMMEA (Failure Mode, Mechanism and Eect Analysis) is proceeded (Ganesan, S. 2004, Ganesan, S. et al. 2005), to obtain the PoF mode and all the corresponding potential failure points. Then the TTF(Time To failure) estimation of every failure mechanism based on PoF model and stress damage model is utilized to carry out for every unit of microelectronic device, which is got a great amount of TTF samples under every failure mechanism simulation. Then “the earliest failure time” is utilized to calculate the TTF of the microelectronic device. Nevertheless, in microelectronic devices application, we hope to get the reliability index such as failure rate and MTTF (Mean Time To failure) to provide basis for later overall unit reliability assessment and evaluation. So regarding TTF as the final result of reliability assessment can’t meet the demand for microelectronic devices application development. A method to compute the reliability index such as failure rate and
MTTF through single point failure distribution fitting and multipoint distribution fusion and other steps is established, and the implementation process of the algorithm is presented. A study case is presented by certain microelectronic device to prove that the method is suitable for engineering application. And this paper solved the practical problem that present reliability simulation for microelectronic devices application.
