ABSTRACT
With the development of modern technology, Understanding of thin film growth mechanism has been playing an important role in optimizing device characteristics for technological application[2,7]. The nanoscale magnetic thin films consisting of ferromagnetic/non-ferromagnetic multilayer for Giant Magnetoresistance (GMR) can be used in magnetic sensors and hard disk devices[1]. It was found that the giant magnetoresistance was related to microstructure, interface roughness and mixing of multilayer films[16, 15]. Therefore, it is of great interest in investigating the growth behaviors of thin film in details. In the past two decades, extensive researches about structure, magnetic and electrical properties of Ni/Cu thin films were studied by different experiment techniques had been reported[24,5,12].
