ABSTRACT
Silicon-on-insulator (SOI) MOSFET is considered as one of the potential candidate to succeed conventional bulk MOSFETs in the scaling roadmap [1-3]. The interest of the research community to use SOI MOSFET for the radio frequency (RF) applications is also growing [3]. To simulate the high frequency behavior of RF circuits, accurate modeling of the non-quasistatic (NQS) effect is required due to the finite transit velocity of carriers [4-5]. To date, there have been many researches to model the NQS effect [5-20]. Nevertheless, most of them are for bulk MOSFETs with the implicit and cumbersome mathematical forms which are difficult to implement.
