ABSTRACT
In recent years, much attention has been focused on kinetic processes during Molecular Beam Epitaxy (MBE) of III-V compound semiconductors, such as GaAs. This is fundamentally important not only for crystal growth but also for fabricating of integrated circuits, optoelectronic and photonic devices. Understanding the microscopic phenomena is a critical step toward optimizing the characteristics of epitaxial structures by altering the growth conditions.
