ABSTRACT
Figure 1 shows that the tunneling and avalanche generation rates increase sharply with electric field in all the devices except in case of 4H-SiC based DDR device where the increase of avalanche generation rate is much sharper than the increase of tunneling generation rate with electric field. This can be understood from equations (1) – (3) of Part I of this paper. The values of both Eg and m* are higher for 4H-SiC compared to those for other materials. Thus the value of the coefficient BT in equation (1) is higher for 4H-SiC which causes a slower rate of increase of tunneling generation rate in comparison of that of avalanche generation rate.
