ABSTRACT
High-voltage complementary metal–oxide semiconductor (HVCMOS) technologies allow both the implementation of special transistors that are capable of generating high-voltage signals and the integration of standard low-voltage transistors that are commonly used to control high-voltage devices. The key element of an HVCMOS sensor is the floating logic structure. A group of p-channel metal oxide semiconductor and n-channel metal oxide semiconductor transistors can be electrically isolated from a lightly doped p-type substrate by a high-voltage deep n-well. The first complementary metal–oxide semiconductor (CMOS)-based sensor chips were developed in the 1960s, but the world of solid-state imaging was revolutionized by another invention. Triple-well monolithic active pixel sensors (MAP) rely as the standard MAPSs on the charge generation in the undepleted epilayer and the charge collection by diffusion. Isolated n-well monolithic active pixel sensors (INMAPS) detectors can implemented in a CMOS process with an epilayer that is modified by adding a deep p-implant. High-voltage monolithic detectors can be implemented in HVCMOS technologies.
