ABSTRACT
Large-area/flexible electronics for Internet of Things applications have garnered significant consideration. Considerable research and development have been done to enable Hf-based dielectric use in mainstream silicon technologies. In an effort to achieve large-area/flexible metal-oxide-semiconductor technology, low temperature high-k gate dielectric deposition is critical. As an attempt to improve the interface quality, forming gas anneals (FGAs) are typically done thereby making an FGA an important processing step in past and current device technologies. The observed threshold voltage instability is caused by electron trapping from the accumulation layer in the transistor channel. The detected charge trapping was unable to de-trap for HfO2. The amorphous indium gallium zinc oxide (ZnO) experienced SS change after prolonged stress suggesting eventual interface state creation while the ZnO subthreshold slope remained constant during the same stress time duration.
