ABSTRACT
This chapter reviews recent progress in the synthesis of (boron) B- and (phosphorous) P- doped SiNCs (Silicon Nano crystals). The advance in the synthesis of doped SiNCs enables modulating the B and P concentrations of SiNCs in a wide range. It is found that the concentrations of both B and P in SiNCs can exceed their solubility limits in bulk Si. Study on the location of dopants in SiNCs shows the preferential location of dopants in SiNCs may greatly depend on the synthesis methods. Doping SiNCs with B and P has enabled novel properties that undoped SiNCs do not possess. The surface chemistry induced by B and P in SiNCs makes it possible to create ligand-free Si— NC colloids which are particularly demanded in low-cost solution-processed devices. LSPRs have been demonstrated in both B- and P-doped SiNCs. In contrast to noble metal and metal oxide NCs, the LSPR energies for doped SiNCs are all located in the mid-infrared region.
