ABSTRACT
Silicon nanowires (SiNWs) are usually regarded as quasi-1D structures with a diameter in the nanometer range. SiNWs have exhibited critical device function and thus can be exploited as device elements in future architectures for micro- or nanosystems. SiNWs are also expected to play a leading role in serving as building blocks for novel micro-or nanoscale electronics assembled without the need for complex and costly fabrication facilities. This chapter provides some major advances in the synthesis, physical and chemical characterization and properties, and application of SiNWs. Some representative properties covered include mechanical, thermal transport, optical, and optoelectronic properties, with emerging applications to the relevant fields. Despite of the significant development gained in characterizing and applying single or individual SiNW in the past decades. The chapter focuses more on the integration and construction of SiNW-based devices and systems, where both bottom-up and top-down approaches require the rational design and synergetic optimization of physical and chemical properties of SiNWs over different length scales.
