ABSTRACT
The main difference between graphene and silicene is that the silicon counterpart has a low-buckled structure —the two triangular sublattices are slightly displaced vertically. The electronic structure of silicene is similar to that of graphene. This chapter looks at the typical method of silicene nanoribbons (SiNRs) fabrication and characterization, depositing Si atoms onto an Ag(110) surface. It shows how modifications like vacancies, doping atoms, or functionalizations may alter the electronic structure of SiNRs. The electronic structure of the SiNRs with various edge shapes was discussed, showing that the band structure of these silicene stripes is dependent on atomic structure. It can be also highly susceptible to various structure modifications. The chapter also shows how these modifications may affect the transport properties to analyze the transport properties of pristine SiNRs. The thermoelectric properties of nanostructure are currently of great interest because of the possibility of heat to electrical energy conversion at nanoscale (Seebeck effect), which may be important for applications.
