Fabrication of Self-Assembled Nanodots at Arbitrary Locations by Spatially Controlled Implant Source Growth

Noting that dots did not form in the 2.5nm deep lines, but did form in 5nm deep lines, we fabricated and then annealed at 600°C a pattern consisting o f crossing 2.5nm deep trenches forming 5nm deep squares at the intersection. SEM images show one self-assembled dot at each intersection, Fig. 2. Thus the nucleation site o f individual nanodots can be spatially controlled by an appropriate choice o f FIB pattern geometry.