ABSTRACT

We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.