High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

doi:10.1201/9781315140810-46

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High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

Chapter

High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

DOI link for High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP book

High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

DOI link for High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP

High resolution photoinduced transient spectroscopy of semi-insulating epitaxial InP book

ByP. Kamiński, S. Lourdudoss, M. Pawłowski, R. Kozłowski, R. Ćwirko, M. Palczewska

BookDefect Recognition and Image Processing in Semiconductors 1997

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Edition 1st Edition

First Published 1998

Imprint Routledge

Pages 4

eBook ISBN 9781315140810

ABSTRACT

A new digital approach to photoinduced transient spectroscopy was applied to study deep levels in epitaxial layers of semi-insulating InP:Fe. The changes in the material defect structure induced by high Fe concentrations are shown.

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