ABSTRACT
III-nitride multi-quantum-well (MQW) LEDs play a key role in emerging solid-state lighting technologies. However, the current luminescence efficiency of III-nitride LEDs is insufficient to support this solid-state lighting technology revolution. Moreover, the drop in efficiency under a large injection current is also a severe technical hindrance. To solve these challenging problems, gaining a deeper and better understanding of the internal luminescence mechanisms of III-nitride MQW LEDs will prove crucial. In this chapter, we attempt to summarize our understanding of the internal luminescence mechanisms of III-nitride MQW LEDs with regard to the reverse quantum confinement Stark effect, localized excitons and exciton-phonon coupling, super lateral diffusion and recombination of carriers, and the non-exponential decaying dynamics of localized carriers. To conclude, suggestions for further studies are briefly discussed.
