ABSTRACT
This chapter explores the photovoltaic effect (PVE) in particular materials. Gallium Arsenide (GaAs) shows the linear PVE, which is characterized by a single independent component. Research on the PVE for GaAs has been accompanied by studies of related phenomena: the photon drag and the surface PVE. In both cases, good agreement was obtained with the calculations, which implied a wavelength dependence for the current involving a change of sign. Gallium Phosphide has a single PVE tensor component. Tellurium was one of the first semiconductors in which the linear PVE was observed and was the first material where the theoretically predicted circular current was observed. Photoinduced free-electron transitions leading to absorption occur when allowance is made for scattering from phonons or impurities. Barium titanate was one of the first crystals where the PVE was observed and researched. The experiments were performed with the material in the tetragonal state in the vicinity of the shoulder of the fundamental absorption edge.
