ABSTRACT
This chapter focuses on issues related to the engineering of high-performance hydrogenated amorphous silicon (a-Si:H) thin-fi lm transistors (TFTs) suitable for large-area highresolution active-matrix liquid crystal displays (AMLCDs). In particular, the underlying physics, numerical simulation, and characterization of a-Si:H TFTs and a-Si:H advanced TFT structures are described.
