ABSTRACT
Carbon nanotubes (CNTs)show ballistic transport property due to the reduced phase space for scattering in the material, besides strong chemical bonding and high thermal conductivity. Different types of doping techniques in the CNT-based devices can be adopted as per the required applications. In this chapter, we begin with different methods and techniques used in doping of CNTs for various electronic applications. Endo, exo, and substitutional doping methods are discussed in detail. Moreover, negative differential resistance effect is also explained in carbon nanotube field-effect transistors (CNTFETs) and metal oxide semiconductor field-effect transistors (MOSFETs), and in chromium-doped CNT channels showing convincing results for logic circuits, multipliers, oscillators, memories, etc. Furthermore, effect of various dopant elements such as tellurium, antimony, arsenic, and bismuth on electronic transport properties of two probe CNT systems is also discussed in detail showing exciting results for various electronic circuit applications. A new technique of electrical doping is presented and compared with the conventional doping methods. At the end of the chapter CNT-based sensors are discussed which are more reliable and energy efficient than the conventional type of sensors.
