ABSTRACT
The achievement of useful modern-day electronic gadgets/appliances has been possible due to the rapid advancement of complementary metal oxide semiconductor (CMOS) technology. The rapid progress of the CMOS technology becomes possible due to the aggressive scaling of its basic building block, which is metal oxide semiconductor field-effect transistor (MOSFET). However, as the feature size of the MOSFET reached 100 nm, several short-channel and quantum effects came into play, and it was difficult to make the conventional MOSFET work. Furthermore, the heat dissipation involved in the devices has risen to new heights because of this scaling. Consequently, several alternative materials and device topologies were researched to solve these problems. As far as materials are concerned, graphene, transition metal dichalcogenides, and silicene/germanene have been the widely researched materials due to their inherent features. In this chapter, an introduction to these materials and the features offered by them are highlighted. Besides, the reported FETs based on these materials have been introduced. In addition, the challenges faced in the implementation of these FETs are also presented.
