ABSTRACT
As the feature size of the metal oxide semiconductor field-effect transistor (MOSFET) reached 100 nm, several short-channel and quantum effects came into play and it was difficult to make the conventional MOSFET work. Consequently, several alternative materials and device topologies were reported to solve these problems. The alternative materials based on FET have been introduced in Chapter 4. In this chapter, first an overview of several non-linear and short channel effects is presented. Second, some non-conventional solutions to the problems arising due to the miniaturization are presented. These solutions include the employment of insulating layer in the bulk, multiple gates, multiple materials for the gate (s), multiple doping regions in the channel, and the strained channel. Besides, the effect on the several performance parameters of MOSFET due to these solutions has been described. Finally, the performance analysis of multigate multi-material tunnel FET is given which is considered to be an important device for future CMOS technology.
