ABSTRACT
As the fabrication technology of graphene nanoribbon field-effect transistors (GNRFETs) is at an early stage, the significant progress in experiments and the evaluation of device performance are accompanied with substantial achievements in theoretical work based on computational simulation techniques. The GNRFET has been simulated by solving a quantum transport model based on non-equilibrium Green’s function (NEGF) formalism that fully treats short-channel-length electrostatic effects and quantum tunneling effects. Three approaches based on classical, semi-classical, and quantum mechanics can be used for the study of transport in transistors. A full quantum transport model based on NEGF formalism in mode space is developed for the simulation of GNRFET, where the energy-position-dependent Hamiltonian is employed using non-parabolic effective mass (NPEM) model. The quantum-based simulation is the most computationally demanding approach as the quantum effects become more and more important by scaling down the channel length. This chapter describes the physical model of carrier transport based on the NEGF formalism.
