ABSTRACT
The International Technology Roadmap for Semiconductors (ITRS 2013) has specified the emerging application of alternative channel materials in order to continue the production of a switching transistor for the two categories of high-performance and low-power digital integrated circuits (ICs). This chapter investigates the static device metrics and switching attributes of graphene nanoribbon field-effect transistors (GNRFETs) for scaling the channel length considering OFF-current, ION/IOFF ratio, subthreshold swing, drain-induced barrier-lowering, voltage transfer characteristic, intrinsic gate capacitance, intrinsic cut-off frequency, intrinsic gate-delay time, and power-delay product (PDP). To continue the production of a switching transistor, performance has been improved by shortening the gate length by decreasing the capacitance and supply voltage VDD, together with increasing the ON-current, which is characterized by the intrinsic speed of transistor as a guiding metric for projecting the roadmap of emerging technology. In addition to the bandgap requirement for low-power design, the complementary operation (normally-off and normally-on devices) is required for digital logic applications.
