ABSTRACT
The exponential trend in scaling metal oxide semiconductor field-effect transistors (MOSFETs) has satisfied Moore’s law for decades, leading to denser chips with more functionality, a lower price per chip, faster switching, and lower power consumption. This chapter develops a physics-based analytical model for circuit simulation of GNRFETs. The band-to-band tunneling (BTBT) from drain to channel regions can be important for small-bandgap GNRs, which has been modeled by a current source in parallel with another current source for the thermionic current. Tight-binding (TB) calculation can be employed based on the nearest-neighbor orthogonal pz orbitals as basic functions equal to the number of atoms in a desired unit cell in the transverse direction. The key parameter for evaluating GNRFET current is to find the variation in the channel surface potential (?ch) in response to the variation in gate and source/drain voltages.
