ABSTRACT
Radiation hardness is the residual signal that is left after irradiation compared to the signal before irradiation, measured in the same conditions. The radiation effects on p-type or n-type silicon substrates are basically the same for planar or for three-dimensional (3D) sensors. The interelectrode spacing and the substrate thickness should be carefully selected depending on the expected radiation levels. Many irradiation tests have been performed on new and optimized 3D devices, with applications to upgraded high-energy physics experiments at European Centre for Nuclear Research. The performance of 3D-double-sided double-type column confirmed once more to be comparable to that of full 3D sensors. The idea behind a 3D sensor with a double-side process was motivated by the possibility of achieving performance comparable to full 3D detectors while reducing the process complexity. The success of this approach proved to be a fundamental advantage in the case of the first medium-volume production of these devices and finally their use in an experiment.
