ABSTRACT
The most important features of the method of secondary ion mass spectrometry (SIMS) are a very low sensitivity limit for majority of elements, the possibility of measuring the concentration profiles of implanted impurity with a depth resolution better than 5 nm, spatial resolution in the micrometer range, the possibility of isotope analysis, and identification of all the elements and isotopes starting from hydrogen. SIMS is now a well-established method with special instrumentation and sophisticated techniques for analysis of various objects. Many physical aspects of secondary ion emission have been studied in detail, but at the same time there are many problems still to be solved. In order to describe the process of secondary ion emission and to establish the relationship between the quantity of ions and physical and chemical properties of surfaces being bombarded. Secondary ion emission begins when the primary ion energy exceeds some threshold level.
