ABSTRACT
In this chapter, the authors have mentioned fabrication process and characteristics for integrated optical waveguide devices by using SiO2/SiON, SiO2/GeO2-SiO2 and silicon on insulator (SOI) material. In the last few years, growing attention has taken to silicon oxynitride as a potential material for integrated optics due to its excellent optical properties such as low absorption losses in the visible and near infrared region, good chemical inertness and low permeability. Silicon nitride, other than oxide, is a material, properties of which would be of interest as we expect it to be the other extreme for silicon oxynitride layers to be grown. SiO2/SiON waveguides were fabricated and demonstrated by different authors, and the index contrast can be varied over a wide range up to 0.53. Like SiO2/SiON material, the refractive index can be changed with application of heat on SiO2/GeO2-SiO2 waveguides.
