ABSTRACT
The integration of 2D materials with their specific resistive characteristics into processing devices, and optical receptors opens up new opportunities for data storage, optoelectronic communication, image processing, computation, neural network systems, and optical data transfer. Owning to the considerable resistive characteristics, the strong light-mater interactions, unique physical as well as chemical properties, electronic and optoelectronic tunability, and progressing synthesis techniques, ultra-thin 2D materials and their heterostructures have been widely employed to fabricate memristive devices and optical memory instruments. Further improvement of 2D memristor devices based on 2D materials has facilitated the fabrication and development of low energy data processing systems and neuromorphic devices. As quite recently introduced technology, the integration of optical sensing capabilities by charge trapping/detrapping mechanisms in 2D-based memristor devices exhibited various advantages over other nanostructured materials for the image sensory and visual data processing. However, there are still several challenges which should be addressed in order to decrease the programming voltage and energy consumption of electrical and optoelectronic memristors and memory units. There are several strategies taken to alter and improve the charge trapping and transfer characteristics of electrical memristors and optical memory devices. These approaches are based on the hetero-interfaces design in heterostructured memristors, the control of Schottky barrier height at electrode and semiconductor interface, employment of nanostructured component for charge trapping in the active layer of memristors and several other innovative approaches to improve the performance of the state-of-the-art memristor devices. The field of 2D memristors is still in its early stage and further developments are expected as well as new outstanding capabilities of the 2D-based memory devices are highly envisaged to be observed in coming years. This chapter primarily focuses on the RS mechanism of ultra-thin films and 2D materials. The design and fabrication techniques of memristor devices are introduced and both advantages and disadvantages of each fabrication design are discussed. In doing so, the resistive switching phenomena in various 2D memristor devices have been investigated and the memristive properties have been reviewed.
