ABSTRACT
In particular, the authors analyze ambipolar transport where charge transport rates are linked by an electroneutrality condition. The authors discuss the effects of relaxation toward charge compensation and the competition between neutralization and recombination of injected charges in semiconductors. The authors also describe one particular model that is controlled by displacement current. The authors finish with a general discussion of simulation of transport problems. In the drift mechanism, although the electric field tends to accelerate the carriers, they quickly reach a constant velocity because of the presence of resistive forces. However, under a gradient of compositions, a displacement of carriers occurs in the lower composition region by diffusion, independent of their charge sign or number. Ambipolar transport is a specific phenomenon in solid-state physics that describes the motion of excess electronic charge carriers in a quasi-neutral region of a semiconductor.
