ABSTRACT
III-V semiconductors are compound inorganic semiconductors formed using the elements from the group III and group V of the Periodic table. These include elements such as aluminum, gallium, indium along with nitrogen, phosphorus, arsenic, and so on. These can be in the form of binary compounds featuring one element from group III and one from group V, or ternary and quaternary compounds featuring multiple elements from either group. The unique electronic properties of III-V semiconductors include high carrier mobility, high carrier concentration, direct bandgap, tunable bandgap, and so on. However, these properties are severally degraded in the presence of lattice defects, thus leading to poor performance from polycrystalline or amorphous III-V thin films. In this chapter, we investigate the fundamentals of the electronic properties of III-V materials and seek ways of forming flexible monocrystalline III-V films.
