ABSTRACT
This chapter discusses bulk Gallium Oxide (β-Ga2O3) single crystals in terms of growth techniques, crystal size, and structural quality, as well as their thermal, mechanical, optical, and electrical properties. β-Ga2O3 is an ultra-wide bandgap oxide semiconductor with a bandgap of about 4.85 eV that offers opportunities for developing novel devices, particularly in UV optoelectronics and high-power electronics. Solutions at high temperatures and atmospheric pressure were used to grow bulk β-Ga2O3 crystals at temperatures far below the melting point of β-Ga2O3, where it is thermally stable. An interior of the afterheater defines a free space for the growing β-Ga2O3 crystal. The cylinder length of β-Ga2O3 crystals grown by the Czochralski method will, therefore, depend on the free carrier concentration and the crystal diameter. Thermal and mechanical properties of β-Ga2O3 are important during bulk crystal growth, epitaxial growth of layers, as well as fabrication and operation of devices.
