ABSTRACT

Ternary Barium Stannate (BaSnO3) compound is a wide bandgap oxide showing n-type semiconducting behavior and transparency in the visible spectrum. The source material of BaSnO3 whether undoped or doped was prepared by mixing SnO2 and BaCO3 powder in a stoichiometric composition. Incongruent and strong evaporation of BaSnO3 constituents at high temperatures makes the growth from the melt challenging. Optical properties of BaSnO3 were intensively investigated both experimentally and theoretically to understand its fundamental properties and elicit its capability in a device design for specific fields of applications. Flux-grown BaSnO3 crystals were intensively investigated for electrical properties whether undoped or doped with La and Sb. Stronger scattering is also reflected in a steeper decrease in the Hall mobility with free electron concentration as compared with La-doped BaSnO3 crystals. BaSnO3 possesses structural and electronic properties that may make it very attractive for generation 2DEGs when combined with another suitable perovskite.