ABSTRACT
This chapter begins with the issues of technology scaling and limitations of complementary metal oxide semiconductor (CMOS) for designing low-power and energy-efficient circuits. Emerging devices with steep subthreshold swing and lower standby leakage outperform CMOS technology at scaled channel lengths. Many beyond CMOS devices such as tunnel field-effect transistor (FET), negative capacitance FET, carbon nanotube FET, graphene nanoribbon FET, and spintronics are presented. Further, each emerging device structure and principle of operation is clearly explained. Later, emerging device based circuit designs are benchmarked against CMOS-based designs. Apart from the benefits, emerging device challenges and unique device characteristics are also discussed in this chapter.
