ABSTRACT
A metal–oxide–semiconductor field-effect transistor (MOSFET) is a field-effect transistor (FET) where the voltage applied to gate determines the conductivity of the device. A more elaborated use considers the power MOSFETs in H-bridge converters for a reversible control of an actuator. The power MOSFETs have been optimized for their circuit use, and two categories have been designed in: the enhancement-mode and the depletion-mode MOSFETs. The enhancement-mode MOSFETs need a gate voltage of same polarity as the drain voltage. Both gate-source and gate-drain charges are used within the gate driver circuit design. The gate-drain capacitance—though smaller in static value than the gate-source capacitance—goes through a voltage excursion that is often more than 20 times that of the gate-to-source capacity. The automotive power electronics is dominated by the usage of power MOSFET devices as power switches. Using a new material technology for the fabrication of a MOSFET device introduces some differences in control and operation.
