ABSTRACT
The results described in this chapter, may be considered as the physical basis for the different methods of barrier-noise level spectroscopy that make it possible to detect local centers and to study directly their nature in semiconductor devices. In addition, these methods enable one to study the defect structure of low-resistivity semiconductor materials while other methods of investigation may appear unsuitable for such materials. The results described in this chapter may also be used when one studies the nature of the current noise in different semiconductor devices and tries to understand the conditions necessary to decrease the level of this noise.
