ABSTRACT

Epitaxy helps to minimize the occurrence of latch-up; improve performance of devices and better control of the concentrations of doping on the devices can also be gained. Chemical vapor deposition is the most widely used form of Vapour Phase Epitaxy for Si epitaxy. The opposite is true for B. 2.7 Selective epitaxy is the growth of single crystal silicon in windows etched into thermally grown oxide on the wafer surface. Selective epitaxy with or without controlled polycrystalline silicon being grown on top of the oxide is possible. Selective epitaxy with polycrystalline silicon overgrowth utilizes deposition conditions that promote nucleation, such as: Selective epitaxy with polycrystalline silicon overgrowth can be accomplished with SiH4 at 975 C and 760 torr deposition pressure. Silicon epitaxy has been effectively demonstrated as: All these low temperature epitaxy processes have limited application because they require very low growth rates to achieve even partially satisfactory crystal quality.