ABSTRACT
Silicon is unique among semiconductor materials and what makes it so popular is that silicon forms an excellent native oxide, SiO2 with ease. Dry oxidation is normally used to produce films thicker than 110 nm or as a second step in the growth of thicker films. The reason for this higher oxidation rate is the ability of hydroxide to diffuse through the already-grown oxide much quicker than O2. Having the fast growth rate, wet oxidation is normally used where thick oxides are required, for example masking layer, insulation and the passivation layers. A general solution for this equation can be given as Oxidation rate can increase significantly by increasing temperature of the oxidation environment in wet as well dry processes. The wet oxidation has a significantly higher rate than dry oxygen, so any a unintentional moisture accelerates the dry oxidation.
