ABSTRACT
Extreme ultraviolet is still the official front runner then nanometer-scale mechanical printing is a strong contender with electron beam lithography that has demonstrated minimum features less than 10 nm wide and continuous developing both for mask making and for directly writing on the wafer. The use of electrons whose direction can be controlled by a magnetic field provides no requirements to practice a mask in the lithographic system. Electron beam lithography offers a more accurate technique with higher resolution but there are some problems associated, as the system has a very low throughput, and it is slow process. The major factor that limits electron beam lithography is scattering of electrons. Electron beam resists can be used in X-ray lithography because when an X-ray photon impinges on the specimen, electron emission results.
