ABSTRACT
In the 1970's the use of ion implantation to modify the electrical properties of semiconductors, metals, insulators and ceramics became extremely popular. Indeed the early history of ion implanter made much progress when research in nuclear physics shifted to high energy that laboratory machine was no longer useful and was instead used to investigate the relatively low energy of ion-solid interaction that is useful for ion implantation. Basically, the ion implant system consists of several systems, which are gas system, electrical system, vacuum system, control system, and beam line system. Collision can cause ion scattering loss and creation of unwanted ion species for ion implantation. Alternatively, the x-y scan plates can direct the beam to scan the surface of wafer for ion implantation. The reason ion implantation can be used successfully is because large numbers of ions are implanted so an average depth for the implanted dopants can be calculated.
