ABSTRACT
Atoms from group II of the Periodic Table normally occupy group III sites in III–V semiconductors, acting as shallow acceptors. The curves looked rather like profiles of zinc in GaP, showing the familiar concave section, and Chang and Casey proposed a similar substitutional-interstitial mechanism. Tuck and Hooper suggested that the complex is relatively immobile and that the remaining zinc diffuses by the conventional substitutional-interstitial mechanism. The diffusion of cadmium into AlSb has been studied by Shaw and Showan, using radiotracer cadmium. The out-diffusion from the highly doped regions was monitored using both sims and electrical measurements. Surprisingly, these experiments indicated a very much lower rate of diffusion for GaAs than had been found previously for GaP. There is very little data on mercury and magnesium in the III–Vs. Sharma et al used radioactive mercury and diffused into n-type InAs from the vapour phase.
