ABSTRACT
Chapter 6 shows that the SIMO inverters can be implemented using gallium nitride (GaN) transistors instead of silicon MOSFETs. The silicon-based SIMO inverters require the use of either additional blocking diodes or a pair of back-to-back connected MOSFETs to eliminate reverse conduction. Unfortunately, these extra devices increase the conduction losses and hence, degrade the power efficiency. GaN transistors emerge as a better alternative because they do not have an intrinsic body diode. By applying appropriate gate drive voltage, the GaN FET can be switched off completely without any reverse conduction. Hence, no additional blocking diode or back-to-back connected GaN FETs are needed in a GaN-based SIMO inverter, which leads to a simplified circuit structure, reduced component count, smaller form factor, and higher efficiency. On the other hand, new switching schemes such as Type III and modified Type III are introduced, which enables the SIMO inverter to produce multiple output frequencies. Theoretical analysis of Type III and modified Type III switching schemes is included. In particular, it is analytically proven that sinusoidal oscillation of SIMO inverters is achievable under these two schemes.
