ABSTRACT
This chapter reviews the development history of MOS technology and discusses the motivation of emerging Ge as channel material for advanced technology node. It also reviews the challenges facing Ge as a channel material, including a concise history of the study of Ge, a brief discussion about the GeO2/Ge degradation, and a brief review of the Ge passivation techniques. In the final part of this chapter, the objectives of this study and its organization are introduced.
