ABSTRACT
This chapter presents an implementation of the Lorentz force effects in a simulation program which incorporates both external field effects as well as self-induced fields for metallic materials as well as semiconducting materials. The implementation is rooted in the geometrical discretization of the vector potential which exclusively represents the vector potential by scalar variables assigned to the links of the computational grid. Steady-state self-induced Lorentz force effects are equally realistic but are in general considered to be of less importance due to the fact that they are a few orders of magnitude less pronounced. However, the steady-state solvers may be very useful for estimating effects in the transient regime by extending their use to the quasi-static regime. The self-induced Lorentz force currents represent a non-linear correction to the current density constitutive relation and the artillery of computational techniques for semiconductor simulations are required to arrive at a solution even for metallic domains.
