ABSTRACT
This chapter presents a full physical simulation picture of the electromagnetic phenomena combining electromagnetic fields and carrier transport in semiconductor devices in the transient regime. The simulation tool computes the electromagnetic fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force. The chapter presents the equations that will serve as a starting point for the implementation of the Hall effect and the self-induced Lorentz forces. It emphasizes that the Lorentz force, although having a magnetic origin is not related to skin effects and proximity effects. The latter correspond to altering the current flow due to the presence of time varying magnetic fields thereby altering the electric field. The currents are related to the electric field according to Ohm’s law in metallic domains and according to the drift-diffusion current-continuity equations in semiconducting domains.
