ABSTRACT
This chapter presents the main results of an Electro-Static Discharge (ESD) protection for advanced CMOS technology with Electro-Magnetic (EM) field effect and Lorentz Force (LF) contributions during fast transient and high-current surge. The goal is to know the generated EM field during an ESD event and the impact within the structure where the LF could impact the final response. To address this goal the first step is building a tool to simulate fast transient conditions with all participating physical mechanisms included. The chapter performs a study of the full structure with EMLF simulation for positive and negative ESD events. The main focus will be on EMLF simulations due to the fact that many physical parameters are calculated. In order to provide a complete electromagnetic picture, the chapter included the LF in the silicon transport equations.
