ABSTRACT
In recent years, there is a growing demand towards combining standalone electromagnetic (EM) solvers and technology computer-aided design (TCAD) semiconductor device simulators in mixed-signal, RF and multi-domain simulation. This is because the simplification of semiconductors in linear EM analysis and the neglect of magnetic effects in TCAD simulation have become insufficient to capture the field-carrier interactions that are getting stronger as a direct consequence of the increasing operational frequency and the decreasing signal level. This chapter proceeds with developing a numerically efficient formulation for electromagnetic-TCAD co-simulation for fast-transient computations. The EM-TCAD coupled simulation essentially refers to a concurrent solution of the Maxwell’s equations that describe the ubiquitous EM dynamics, and the transport equations describing the charge carrier dynamics in semiconductors. The chapter develops an E-V based framework in the time-domain for the fast-transient EM-TCAD simulation.
