ABSTRACT
This chapter outlines the fundamentals of Atomic layer deposition (ALD) process and features and highlights a brief survey on the current status of ALD. ALD is an effective coating technique for fabrication of high quality and uniform thin films and precise material growths at a nanometric scale. Advantages and disadvantages of ALD are discussed, and a comparison of thin film deposition methods are explained. During the second half of the cycle, water vapour is introduced to the surface, where it undergoes a reaction with CH3 groups, resulting in the production of residual CH4 and termination of the surface with -OH groups, thereby preparing it for the subsequent deposition cycle. As seen, ALD film has the best uniformity and conformality compared to the sol-gel, CVD, and PVD methods. ALD of Al2O3 is the most frequently investigated film in thin film technology. Atomic-scale film deposition could transform microelectronics, energy storage, and biomedical engineering.
