ABSTRACT
III-nitride materials, namely, CaN/InN/GaN quantum wells (QWs), might also be in a topologically nontrivial state if grown with inverted conduction and valence bands [1]. Band inversion occurs when strong polarization fields push the conduction QW ground energy level lower than the edge of the valence band, as illustrated in Fig. 10.1. Inverted sub-band spectrum in generic GaN/InN/GaN QW, E′<sub>v</sub>> E′<sub>c</sub>. Internal electric fields originate from misfitstrain-induced and spontaneous polarizations. https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003480228/f108f360-dbd1-4751-9a62-5b40ed0bb962/content/fig10_1_C.jpg" xmlns:xlink="https://www.w3.org/1999/xlink"/>
