ABSTRACT
SIMS on the transistor scale appears impossible when considering the 3D geometry involved and the spatial resolution that is required. This chapter will review and introduce advanced SIMS concepts that allow for the extraction of doping, composition and even dimensional information from nanoscale structures. These advances have extended SIMS measurement capabilities from blanket to the transistor scale. When utilizing nanoscale arrays the results show extremely high sensitivity and statistical relevance that bridges the gap between localized device measurements and large-scale blanket film measurements.
