ABSTRACT
This chapter illustrates concepts of dielectric films through the progression of band engineering over the past decade. Fundamental nonvolatile memorie (NVM) device design approach for extending endurance by reducing peak programming field in the stack design and DTM stack design concepts and band-engineering approach for device parameter enhancements have been discussed in considerable detail in. Several selected illustrations of band diagrams are shown below to demonstrate the concepts leading to CT NVM devices evolve into multifunctional CT-NVM devices and subsequently into CT-FSUM device as illustrated in. Programming speed could be enhanced by greater than four orders of magnitude through this approach compared to the Fowler Nordheim tunneling mechanism used in conventional NVM devices. Multimechanism-carrier-transport (MMCT) device design could readily achieve sub-hundred nano-sec device programming performance, yet the transport could be sufficiently energy efficient without seriously compromising endurance and reliability.
