ABSTRACT
Silicon based unified memories (SUMs) have great potential for next decade and beyond in providing unified nonvolatile memory products for the digital systems. The CT-NVM-based SUMs incorporate band engineering and high K dielectrics, as well as DTM based highly efficient charge transport, in the gate stack designs and provide options to the replacements of traditional SRAM, DRAM, NROM, NAND flash, and SSD memory hierarchy existing today. SUM technology could be readily integrated at system-on-chip level as well as in advanced packaging levels to provide a broad range of diversified applications for the current and future digital electronics. SUM devices have the potential to provide a unified memory system covering the entire performance/capacity spectrum of the memory hierarchy. Additionally, SUM devices have the potential to act as catalyst to provide novel memory subsystems with simultaneous enhancements in Memory Density per package, cost reduction per function, significant enhancement in data throughput, reduction in energy consumption, and enhancement in memory and system durability.
